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Data Sheet PU10542EJ02V0DS
3
NE55410GR
THERMAL RESISTANCE (TA
= +25?C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Channel to Case Resistance
Rth (ch-c)
?
2.5
3.0
?C/W
RECOMMENDED OPERATING CONDITIONS (TA
= +25?C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
?
28
30
V
Gate to Source Voltage
VGS
2.7
3.3
3.7
V
Input Power (Q1), CW
Pin (Q1)
?
15
23
dBm
Input Power (Q2), CW
Pin (Q2)
?
20
30
dBm
ELECTRICAL CHARACTERISTICS (TA
= +25?C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Q1
Gate to Source Leak Current
IGSS (Q1)
VGSS
= 5V
?
?
1
?A
Drain to Source Leakage Current
IDSS (Q1)
VDSS
= 65 V
?
?
1
mA
Gate Threshold Voltage
Vth (Q1)
VDS
= 10 V, IDS
= 1 mA
2.2
2.8
3.4
V
Transconductance
gm (Q1)
VDS
= 28 V, IDS
= 20 mA
?
0.09
?
S
Drain to Source Breakdown Voltage
BVDSS (Q1)
IDSS
= 10 ?A
65
75
?
V
Q2
Gate to Source Leak Current
IGSS (Q2)
VGSS
= 5V
?
?
1
?A
Drain to Source Leakage Current
IDSS (Q2)
VDSS
= 65 V
?
?
1
mA
Gate Threshold Voltage
Vth (Q2)
VDS
= 10 V, IDS
= 1 mA
2.0
2.6
3.2
V
Transconductance
gm (Q2)
VDS
= 28 V, IDS
= 100 mA
?
0.45
?
S
Drain to Source Breakdown Voltage
BVDSS (Q2)
IDSS
= 10 ?A
65
75
?
V
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